The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Jul. 31, 2019
L-shaped stepped word line structure, method of manufacturing the same, and three-dimensional memory
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Gang Zhang, Beijing, CN;
Zongliang Huo, Beijing, CN;
Abstract
Provided is an L-shaped stepped word line structure including: L-shaped word line units, each including a long side extending in a second direction and arranged adjacent to a gate line slit, and a short side extending in a first direction. A word line terminal included in the short side is formed in a stepped stacked layer structure including stacked layer pairs formed of an insulating material, a region close to the gate line slit in a stacked layer of each stacked layer pair serves as a replacement metal region including a short side region surface/internal metal layer respectively located on a surface/in an interior. In a first direction, a length of the short side region surface metal layer is greater than that of the short side region internal metal layer, and the word line terminal corresponds to the short side region surface metal layer.