The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Oct. 13, 2021
Applied Materials, Inc., Santa Clara, CA (US);
Yifeng Zhou, Fremont, CA (US);
Qian Fu, Pleasanton, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The substrate may include one or more patterned features separated by exposed regions of the substrate. The methods may include providing a hydrogen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor and the hydrogen-containing precursor. Forming the plasma of the silicon-containing precursor and the hydrogen-containing precursor may be performed at a plasma power of less than or about 1,000 W. The methods may include depositing a silicon-containing material on the one or more patterned features along the substrate. The silicon-containing material may be deposited on the patterned features at a rate of at least 2:1 relative to deposition on the exposed regions of the substrate.