The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Oct. 18, 2021
Applicant:
Analog Devices, Inc., Wilmington, MA (US);
Inventors:
James G. Fiorenza, Carlisle, MA (US);
Daniel Piedra, Somerville, MA (US);
Assignee:
Analog Devices, Inc., Wilmington, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02694 (2013.01); H01L 21/0245 (2013.01); H01L 21/02488 (2013.01); H01L 21/02502 (2013.01); H01L 21/0254 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01);
Abstract
Electric field management techniques in GaN based semiconductors that utilize patterned regions of differing conductivity under the active GaN device, such as a GaN high electron mobility transistor (HEMT), are described. As an example, a patterned layer of oxidized silicon can be formed superjacent a layer of silicon dioxide during or prior to the heteroepitaxy of GaN or another semiconductor material. These techniques can be useful for back-side electric field management because a silicon layer, for example, can be made conductive to act as a back-side field plate.