The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2024

Filed:

Apr. 19, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Myeongsik Ryu, Anyang-si, KR;

Bokyeon Won, Namyangju-si, KR;

Kyoungmin Kim, Namyangju-si, KR;

Donggeon Kim, Suwon-si, KR;

Sangwook Park, Hwaseong-si, KR;

Inseok Baek, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/408 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4085 (2013.01);
Abstract

A memory device includes a first sub wordline driver including a first active region connected to a first wordline through a first direct contact, and a first transistor connected to a first gate line, the first gate line and the first wordline extending in a first direction, and a second sub wordline driver including a second active region connected to a second wordline through a second direct, the second direct contact and first direct contact extending in parallel in a second direction, the second direction being perpendicular to the first direction. A second transistor is connected to a second gate line. The second gate line extends in the first direction. A third wordline driven by a third sub wordline driver is between the first wordline and the second wordline.


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