The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2024

Filed:

Mar. 19, 2020
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Tsubasa Honke, Osaka, JP;

Kyoko Okita, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/06 (2006.01); C30B 29/36 (2006.01); C30B 29/64 (2006.01); C30B 33/00 (2006.01); H01L 21/02 (2006.01); H01L 29/16 (2006.01); H01L 29/36 (2006.01); C09G 1/02 (2006.01); C09G 1/04 (2006.01); C30B 23/00 (2006.01); C30B 23/02 (2006.01);
U.S. Cl.
CPC ...
C30B 29/36 (2013.01); C30B 29/06 (2013.01); C30B 33/00 (2013.01); H01L 21/02021 (2013.01); H01L 21/02024 (2013.01); H01L 21/02052 (2013.01); H01L 29/1608 (2013.01); H01L 29/36 (2013.01); C09G 1/02 (2013.01); C09G 1/04 (2013.01); C30B 23/00 (2013.01); C30B 23/02 (2013.01); C30B 23/025 (2013.01); C30B 29/64 (2013.01); H01L 21/02019 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); Y10T 428/219 (2015.01); Y10T 428/24355 (2015.01); Y10T 428/24777 (2015.01); Y10T 428/24942 (2015.01); Y10T 428/31 (2015.01);
Abstract

A silicon carbide substrate has a first main surface, a second main surface, and a chamfered portion. The second main surface is opposite to the first main surface. The chamfered portion is contiguous to each of the first main surface and the second main surface. The silicon carbide substrate has a maximum diameter of 150 mm or more. A surface manganese concentration in the chamfered portion is 1×10atoms/cmor less.


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