The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Jul. 18, 2019
Uchicago Argonne, Llc, Chicago, IL (US);
The University of Chicago, Chicago, IL (US);
Alex B. Martinson, Naperville, IL (US);
Seth B. Darling, Chicago, IL (US);
Ruben Waldman, Chicago, IL (US);
UCHICAGO ARGONNE, LLC, Chicago, IL (US);
THE UNIVERSITY OF CHICAGO, Chicago, IL (US);
Abstract
The sequential infiltration synthesis (SIS) of group 13 indium and gallium oxides (InOand GaO) into polymethyl methacrylate (PMMA) thin films is demonstrated. Examples highlight the an SIS process using trimethylindium (TMIn) and trimethylgallium (TMGa), respectively, with water. In situ Fourier transform infrared (FTIR) spectroscopy reveals that these metal alkyl precursors reversibly associate with the carbonyl groups of PMMA in analogy to trimethylaluminum (TMAl), however with significantly lower affinity. SIS with TMIn and water enables the growth of InOat 80° C., well below the onset temperature of atomic layer deposition (ALD) using these precursors.