The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2024

Filed:

Feb. 23, 2021
Applicant:

Ngk Insulators, Ltd., Nagoya, JP;

Inventors:

Taku Nishigaki, Nagoya, JP;

Suguru Kodama, Nagoya, JP;

Keisuke Kimura, Ichinomiya, JP;

Assignee:

NGK INSULATORS, LTD., Nagoya, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B 32/963 (2017.01); B01J 27/224 (2006.01); B01J 35/40 (2024.01); B01J 35/56 (2024.01); B01J 37/04 (2006.01);
U.S. Cl.
CPC ...
C01B 32/963 (2017.08); B01J 27/224 (2013.01); B01J 35/40 (2024.01); B01J 35/56 (2024.01); B01J 37/04 (2013.01); C01P 2004/61 (2013.01);
Abstract

A method for manufacturing a honeycomb structure containing silicon carbide, including blending a recycled raw material derived from a material constituting a first honeycomb structure containing silicon carbide in a process after firing as a part of an initial raw material for a second honeycomb structure containing silicon carbide, wherein the initial raw material comprises silicon carbide and metallic silicon; and the recycled raw material is a powder recovered from the material constituting the first honeycomb structure containing silicon carbide in the process after firing, and after the recovering, a particle size is adjusted so that a 10% diameter (D10) is 10 μm or more and a 50% diameter (D50) is 35 μm or less when a cumulative particle size distribution on a volume basis is measured by a laser diffraction/scattering method.


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