The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2024

Filed:

Oct. 27, 2015
Applicant:

Korea Advanced Institute of Science and Technology, Daejeon, KR;

Inventors:

Hee-Tae Jung, Daejeon, KR;

Hwan-Jin Jeon, Daejeon, KR;

Woo-Bin Jung, Daejeon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/22 (2006.01); B22F 1/054 (2022.01); B22F 7/04 (2006.01); B22F 9/02 (2006.01); B81C 1/00 (2006.01); B82Y 10/00 (2011.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); C03C 17/00 (2006.01); C30B 23/00 (2006.01); C30B 29/02 (2006.01); C30B 29/16 (2006.01); C30B 29/60 (2006.01); C30B 33/08 (2006.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00031 (2013.01); B22F 1/054 (2022.01); B22F 7/04 (2013.01); B22F 9/02 (2013.01); B82Y 10/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C03C 17/006 (2013.01); C23C 14/221 (2013.01); C30B 23/00 (2013.01); C30B 29/02 (2013.01); C30B 29/16 (2013.01); C30B 29/60 (2013.01); C30B 33/08 (2013.01); G03F 7/0002 (2013.01); G03F 7/0037 (2013.01); C03C 2217/42 (2013.01); C03C 2218/34 (2013.01); Y10T 428/24479 (2015.01); Y10T 428/24612 (2015.01);
Abstract

A method of fabricating nanostructures using macro pre-patterns according to the present invention, which comprises either depositing a target material on a substrate having macro pre-patterns formed thereon, or applying a target material to a substrate and then forming macro pre-patterns on the substrate, and then depositing the target material on the side surface of the macro pre-patterns by an ion bombardment phenomenon occurring during etching, provides a three-dimensional nanostructures with high aspect ratio and uniformity can be fabricated by a simple process at low cost by using the ion bombardment phenomenon occurring during physical ion etching, thereby achieving the high performance of future nano-devices, such as nanosized electronic devices, optical devices, bio devices and energy devices.


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