The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2024
Filed:
Sep. 10, 2021
Applicant:
Kioxia Corporation, Tokyo, JP;
Inventors:
Naoki Akiyama, Seoul, KR;
Kenichi Yoshino, Seongnam-si, KR;
Assignee:
Kioxia Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2023.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); G11C 11/161 (2013.01); H10B 61/10 (2023.02); H10N 50/01 (2023.02); H10N 50/85 (2023.02);
Abstract
According to one embodiment, a magnetoresistance memory device includes: a first conductor; a variable resistance material on a top surface of the first conductor; a second conductor on a top surface of the variable resistance material; a first insulator other than nitride on a top surface of the second conductor; a magnetoresistance effect element on a top surface of the first insulator; and a third conductor located on a side surface of the first insulator and extending on a side surface of the second conductor and a side surface of the magnetoresistance effect element.