The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2024
Filed:
Dec. 17, 2019
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Naoaki Hashimoto, Kanagawa, JP;
Satoshi Seo, Kanagawa, JP;
Tsunenori Suzuki, Kanagawa, JP;
Yusuke Takita, Kanagawa, JP;
Takumu Okuyama, Kanagawa, JP;
Nobuharu Ohsawa, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Toshiki Sasaki, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Abstract
A novel light-emitting device, a light-emitting device with high emission efficiency, a light-emitting device with a long lifetime, or a light-emitting device with low driving voltage is provided. An EL layer includes a first layer, a second layer, a third layer, a light-emitting layer, and a fourth layer in this order from the anode side. The first layer contains a first organic compound and a second organic compound. The fourth layer contains a seventh organic compound. The first organic compound exhibits an electron-accepting property with respect to the second organic compound. A HOMO level of the second organic compound is higher than or equal to −5.7 eV and lower than or equal to −5.4 eV. The fourth layer includes a region where the amount of seventh organic compound is large and a region where the amount of seventh organic compound is small in the thickness direction.