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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12101942 B1

PDFFull Text
Date of Patent:
Sep. 24, 2024

Filed:

Sep. 29, 2023

Semiconductor device including chalcogen compound and semiconductor apparatus including the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Wooyoung Yang, Suwon-si, KR;

Bonwon Koo, Suwon-si, KR;

Chungman Kim, Suwon-si, KR;

Kwangmin Park, Seoul, KR;

Hajun Sung, Hwaseong-si, KR;

Dongho Ahn, Hwaseong-si, KR;

Changseung Lee, Yongin-si, KR;

Minwoo Choi, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Jerome Leboeuf

Int. Cl.
CPC ...
H10B 63/00 (2023.01); G11C 13/00 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10B 63/24 (2023.02); G11C 13/0004 (2013.01); H10B 61/10 (2023.02); H10B 63/84 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02); H10N 70/063 (2023.02); H10N 70/231 (2023.02); H10N 70/24 (2023.02); H10N 70/25 (2023.02); H10N 70/8413 (2023.02); H10N 70/8825 (2023.02); H10N 70/8828 (2023.02); H10N 70/8833 (2023.02); H10N 70/8836 (2023.02);
Abstract

A chalcogen compound layer exhibiting ovonic threshold switching characteristics, a switching device, a semiconductor device, and/or a semiconductor apparatus including the same are provided. The switching device and/or the semiconductor device may include two or more chalcogen compound layers having different energy band gaps. Alternatively, the switching device and/or semiconductor device may include a chalcogen compound layer having a concentration gradient of an element of boron (B), aluminum (Al), scandium (Sc), manganese (Mn), strontium (Sr), and/or indium (In) in a thickness direction thereof. The switching device and/or a semiconductor device may exhibit stable switching characteristics while having a low off-current value (leakage current value).

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