The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2024
Filed:
Oct. 20, 2022
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Xu Zhang, San Diego, CA (US);
Xuhao Huang, San Diego, CA (US);
Assignee:
QUALCOMM INCORPORATED, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/01 (2006.01); H03K 3/037 (2006.01); H03K 19/0185 (2006.01); H04M 1/02 (2006.01);
U.S. Cl.
CPC ...
H03K 19/018521 (2013.01); H03K 3/037 (2013.01); H04M 1/026 (2013.01);
Abstract
A level-shifter is provided with a first transistor and a second transistor. The first transistor functions to discharge an internal node responsive to an assertion of an inverted input signal to a first power supply voltage. A second transistor functions to discharge an inverted level-shifter output signal responsive to an assertion of an input signal to the first power supply voltage. An inverter inverts the inverted level-shifter output signal to form a level-shifter output signal that is asserted to a second power supply voltage responsive to the assertion of the input signal.