The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2024
Filed:
Jun. 11, 2020
Applicant:
Ngk Insulators, Ltd., Nagoya, JP;
Inventors:
Yuji Hori, Owariasahi, JP;
Takahiro Yamadera, Nagoya, JP;
Assignee:
NGK INSULATORS, LTD., Nagoya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/02 (2006.01); H03H 3/08 (2006.01); H03H 9/25 (2006.01); H10N 30/072 (2023.01);
U.S. Cl.
CPC ...
H03H 9/02574 (2013.01); H03H 3/08 (2013.01); H03H 9/02559 (2013.01); H03H 9/25 (2013.01); H10N 30/072 (2023.02);
Abstract
A silicon film is provided on a supporting substrate composed of silicon by physical vapor deposition. The silicon film is subjected to heat treatment at a temperature of 400° C. or higher and 600° C. or lower to generate an intermediate layer. The piezoelectric material substrate is bonded to the supporting substrate through a bonding layer of silicon oxide and the intermediate layer. A method of providing an acoustic wave element with a bonded body is also provided.