logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12100936 B1

PDFFull Text
Date of Patent:
Sep. 24, 2024

Filed:

Oct. 08, 2020

Nitride semiconductor structure, nitride semiconductor device, and method for fabricating the device

Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventor:

Toshiyuki Takizawa, Kyoto, JP;

Assignee:

PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD., Osaka, JP;

Attorney:

Rimon P.C.

Primary Examiner:

David Vu

Assistant Examiner:

Brandon C Fox

Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 21/02 (2006.01); H01L 33/18 (2010.01); H01S 5/327 (2006.01);
U.S. Cl.
CPC ...
H01S 5/327 (2013.01); H01L 21/02381 (2013.01); H01L 21/02389 (2013.01); H01L 21/0243 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02494 (2013.01); H01L 21/02516 (2013.01); H01L 21/02521 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02609 (2013.01); H01L 21/0262 (2013.01); H01L 21/02639 (2013.01); H01L 21/02647 (2013.01); H01L 21/0265 (2013.01); H01L 33/002 (2013.01); H01L 33/005 (2013.01); H01L 33/18 (2013.01); H01L 21/02488 (2013.01); H01L 21/02502 (2013.01);
Abstract

A nitride semiconductor structure includes a Group III nitride semiconductor portion and a Group II-IV nitride semiconductor portion. The Group III nitride semiconductor portion is single crystalline. The Group III nitride semiconductor portion has a predetermined crystallographic plane. The Group II-IV nitride semiconductor portion is provided on the predetermined crystallographic plane of the Group III nitride semiconductor portion. The Group II-IV nitride semiconductor portion is single crystalline. The Group II-IV nitride semiconductor portion contains a Group II element and a Group IV element. The Group II-IV nitride semiconductor portion forms a heterojunction with the Group III nitride semiconductor portion. The predetermined crystallographic plane is a crystallographic plane other than a (0001) plane.

Find Patent Forward Citations

Loading…