The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2024
Filed:
Feb. 08, 2021
Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Jilin, CN;
Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun Jilin, CN;
Abstract
A method of fabricating at least one radiation emitter including fabricating a layer stack that includes a first reflector, an active region, an oxidizable layer, and a second reflector; and locally removing the layer stack, and thereby forming at least one mesa. The mesa includes the first reflector, the active region, the oxidizable layer and the second reflector. Before or after locally removing the layer stack and forming the mesa the following steps are carried out: vertically etching at least three blind holes inside the layer stack, wherein the blind holes vertically extend to and expose the oxidizable layer; and oxidizing the oxidizable layer via the sidewalls of the blind holes in lateral direction. An oxidation front radially moves outwards from each hole. The etching is terminated before the entire oxidizable layer is oxidized, thereby forming at least one unoxidized aperture that is limited by at least three oxidation fronts.