The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2024

Filed:

Jun. 04, 2021
Applicant:

Regents of the University of Minnesota, Minneapolis, MN (US);

Inventors:

Bethanie Joyce Hills Stadler, Shoreview, MN (US);

Joseph Um, Minneapolis, MN (US);

Yali Zhang, Minneapolis, MN (US);

Rhonda Franklin, Minneapolis, MN (US);

Rashaunda Henderson, Minneapolis, MN (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01P 3/00 (2006.01); C25D 11/04 (2006.01); C25D 11/18 (2006.01); C25D 11/20 (2006.01); C25D 11/24 (2006.01); H01L 23/66 (2006.01); H01P 11/00 (2006.01);
U.S. Cl.
CPC ...
H01P 3/003 (2013.01); C25D 11/045 (2013.01); C25D 11/18 (2013.01); C25D 11/20 (2013.01); C25D 11/24 (2013.01); H01L 23/66 (2013.01); H01P 11/001 (2013.01); H01L 2223/6627 (2013.01);
Abstract

A method for forming anodic aluminum oxide (AAO) on a substrate includes disposing an Al layer on the substrate, there being a Cu layer between the substrate and the Al layer, and a TiW alloy layer between and in contact with the Cu layer and the Al layer, anodizing the Al layer to provide an AAO layer comprising nanopores extending into the AAO layer to a barrier layer of the AAO at a base of each nanopore and converting at least some of the TiW alloy layer to TiW oxide, over-anodizing the barrier layer to remove at least a portion of the AAO of the barrier layer at the base of each nanopore, and exposing the AAO layer, the TiW oxide, and the TiW to a chemical etchant sufficient to extend the nanopores through the AAO layer to a surface of the Cu layer.


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