The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2024

Filed:

Feb. 22, 2021
Applicant:

Korea Advanced Institute of Science and Technology, Daejeon, KR;

Inventors:

Sanghyeon Kim, Daejeon, KR;

Juhyuk Park, Daejeon, KR;

DaeMyeong Geum, Daejeon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/04 (2010.01); H01L 33/30 (2010.01);
U.S. Cl.
CPC ...
H01L 33/04 (2013.01); H01L 27/156 (2013.01); H01L 33/0062 (2013.01); H01L 33/30 (2013.01);
Abstract

Various embodiments may provide a highly efficient micro light-emitting diode (LED) in a low current range, a method of fabricating the same, and a display including the same. The micro LED includes a first conductive type semiconductor layer and a second conductive type semiconductor layer and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer and having a single quantum well structure. The single quantum well structure may be formed so that a ratio of a conduction band offset of any one of the first conductive type semiconductor layer or the second conductive type semiconductor layer and a valence band offset of the other of the first conductive type semiconductor layer or the second conductive type semiconductor layer becomes greater than 0 and less than 1.


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