The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2024
Filed:
Oct. 30, 2020
Joulwatt Technology (Hangzhou) Co., Ltd., Hangzhou, CN;
JOULWATT TECHNOLOGY (HANGZHOU) CO., LTD., Hangzhou, CN;
Abstract
The present disclosure relates to a lateral double-diffused transistor and a manufacturing method of the transistor. The transistor comprises: a substrate; a well region and a drift region both located in the top of the substrate, a source region located in the well region, and a drain region located in the drift region; a first dielectric layer located on a surface of the drift region; a first field plate layer located above the drift region and covering a first portion of the first dielectric layer; a second dielectric layer covering a surface of part of the first field plate layer and stacked on a surface of a second portion of the first dielectric layer; a second field plate layer located on a surface of the second dielectric layer, comprising at least one contact channel. According to the present disclosure, the transistor increases breakdown voltage and reduces on-state resistance.