The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2024
Filed:
Jul. 12, 2023
Silanna Asia Pte Ltd, Singapore, SG;
Stuart B. Molin, Carlsbad, CA (US);
George Imthurn, San Diego, CA (US);
James Douglas Ballard, Solana Beach, CA (US);
Yashodhan Vijay Moghe, Sydney, AU;
Silanna Asia Pte Ltd, Singapore, SG;
Abstract
An apparatus includes a first lateral diffusion field effect transistor (LDFET) having a first threshold voltage and that includes a first gate electrode, a first drain contact, a first source contact, and a first electrically conductive shield plate separated from the first gate electrode and the first source contact by a first interlayer dielectric. A second LDFET of the apparatus has a second threshold voltage and includes a second gate electrode, a second drain contact, and a second source contact. The second source contact is electrically connected to the first source contact of the first LDFET. A control circuit of the apparatus is electrically coupled to the first electrically conductive shield plate and is configured to apply to the first electrically conductive shield plate a first gate bias voltage of a first level to set the first threshold voltage of the first LDFET to a first desired threshold voltage.