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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12100735 B1

PDFFull Text
Date of Patent:
Sep. 24, 2024

Filed:

Mar. 01, 2023

Semiconductor devices

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Namkyu Edward Cho, Seongnam-si, KR;

Seung Soo Hong, Incheon, KR;

Geum Jung Seong, Seoul, KR;

Seung Hun Lee, Hwaseong-si, KR;

Jeong Yun Lee, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Fish & Richardson P.C.

Primary Examiner:

Eric K Ashbahian

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/311 (2006.01); H01L 21/8238 (2006.01); H01L 27/02 (2006.01); H01L 27/092 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01); H01L 29/78 (2006.01); H10B 10/00 (2023.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/02532 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02636 (2013.01); H01L 21/30604 (2013.01); H01L 21/31111 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823828 (2013.01); H01L 27/0207 (2013.01); H01L 27/0924 (2013.01); H01L 29/0649 (2013.01); H01L 29/0869 (2013.01); H01L 29/165 (2013.01); H01L 29/7848 (2013.01); H10B 10/12 (2023.02);
Abstract

A semiconductor device includes fin patterns on a substrate, at least one gate electrode intersecting the fin patterns, source/drain regions on upper surfaces of the fin patterns, and at least one blocking layer on a sidewall of a first fin pattern of the fin patterns, the at least one blocking layer extending above an upper surface of the first fin pattern of the fin patterns, wherein a first source/drain region of the source/drain regions that is on the upper surface of the first fin pattern has an asymmetric shape and is in direct contact with the at least one blocking layer.

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