The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2024
Filed:
Sep. 02, 2021
Nanya Technology Corporation, New Taipei, TW;
Wei-Zhong Li, Taoyuan, TW;
Hsih-Yang Chiu, Taoyuan, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a bottom conductive region positioned in the substrate; a first gate structure positioned on the substrate; a first drain region positioned in the substrate and adjacent to one sidewall of the first gate structure; and a first extended conductive region positioned in the substrate, under the first drain region, contacting a bottom surface of the first drain region, and distant from the bottom conductive region. A top surface of the first drain region and a top surface of the substrate are substantially coplanar. The bottom conductive region and the first extended conductive region include the same electrical type. The first drain region and the first extended conductive region include different electrical types.