The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2024

Filed:

Jul. 24, 2023
Applicant:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Inventors:

Jong Min Jang, Ansan-si, KR;

Chang Yeon Kim, Ansan-si, KR;

Assignee:

SEOUL VIOSYS CO., LTD., Ansan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/075 (2006.01); H01L 27/15 (2006.01); H01L 33/06 (2010.01); H01L 33/08 (2010.01); H01L 33/14 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 25/0756 (2013.01); H01L 27/156 (2013.01); H01L 33/06 (2013.01); H01L 33/08 (2013.01); H01L 33/14 (2013.01); H01L 33/382 (2013.01); H01L 33/387 (2013.01);
Abstract

A light emitting device including a first light emitting part including a first n-type semiconductor layer, a first active layer, a first p-type semiconductor layer, and a first transparent electrode, a second light emitting part disposed over the first light emitting part and including a second n-type semiconductor layer, a second active layer, a second p-type semiconductor layer, and a second transparent electrode, and a third light emitting part disposed over the second light emitting part and including a third n-type semiconductor layer, a third active layer, a third p-type semiconductor layer, and a third transparent electrode, in which the light emitting device has substantially a quadrangular shape when viewed from the top, and has first to fourth corners.


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