The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2024

Filed:

May. 12, 2020
Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventors:

Kaito Inoue, Kyoto, JP;

Akihiro Kimura, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/07 (2006.01); H01L 23/00 (2006.01); H01L 23/373 (2006.01); H01L 23/492 (2006.01);
U.S. Cl.
CPC ...
H01L 25/072 (2013.01); H01L 23/3735 (2013.01); H01L 23/4924 (2013.01); H01L 24/48 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/18165 (2013.01);
Abstract

The semiconductor device Aincludes a support member, a metal parthaving obverse and reverse surfaces-spaced in z direction, with the reverse surfacebonded to the support member, a second bonding layerboding the support memberand the metal part, a semiconductor elementfacing the obverse surfaceand bonded to the metal part, and a sealing membercovering the support member, metal part, second bonding layerand semiconductor element. The metal partincludes a first bodyof a first material and a second bodyof a second material, with a boundary between the bodies-. The second material has a linear thermal expansion coefficient smaller than that of the first material. The semiconductor device is improved in reliability by reducing thermal stress from heat generation of the semiconductor element.


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