The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2024

Filed:

Apr. 14, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Sarah Michelle Bobek, Sunnyvale, CA (US);

Venkata Sharat Chandra Parimi, Santa Clara, CA (US);

Prashant Kumar Kulshreshtha, San Jose, CA (US);

Kwangduk Douglas Lee, Redwood City, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/683 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01); C23C 16/02 (2006.01); C30B 33/12 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6831 (2013.01); H01J 37/32082 (2013.01); H01J 37/32146 (2013.01); H01J 37/32449 (2013.01); H01J 37/32743 (2013.01); H01L 21/02274 (2013.01); H01L 21/02315 (2013.01); H01L 21/0234 (2013.01); H01L 21/32136 (2013.01); H01L 21/6833 (2013.01); C23C 16/0245 (2013.01); C30B 33/12 (2013.01); H01J 2237/036 (2013.01); H01J 2237/32 (2013.01); H01L 21/02252 (2013.01); H01L 21/3065 (2013.01);
Abstract

One or more embodiments described herein generally relate to methods for chucking and de-chucking a substrate to/from an electrostatic chuck used in a semiconductor processing system. Generally, in embodiments described herein, the method includes: (1) applying a first voltage from a direct current (DC) power source to an electrode disposed within a pedestal; (2) introducing process gases into a process chamber; (3) applying power from a radio frequency (RF) power source to a showerhead; (4) performing a process on the substrate; (5) stopping application of the RF power; (6) removing the process gases from the process chamber; and (7) stopping applying the DC power.


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