The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2024
Filed:
Jun. 27, 2023
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventor:
Toshiya Suzuki, Machida, JP;
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/40 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H10B 69/00 (2023.01); C23C 16/56 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0234 (2013.01); C23C 16/402 (2013.01); H01L 21/02164 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01); H01L 21/3105 (2013.01); H01L 21/31111 (2013.01); H10B 69/00 (2023.02); C23C 16/401 (2013.01); C23C 16/56 (2013.01);
Abstract
A method of post-deposition treatment for silicon oxide film includes: providing in a reaction space a substrate having a recess pattern on which a silicon oxide film is deposited; supplying a reforming gas for reforming the silicon oxide film to the reaction space in the absence of a film-forming precursor, said reforming gas being composed primarily of He and/or H; and irradiating the reforming gas with microwaves in the reaction space having a pressure of 200 Pa or less to generate a direct microwave plasma to which the substrate is exposed, thereby reforming the silicon oxide film.