The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2024

Filed:

Dec. 13, 2022
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Jin Ho Jeong, Gyeonggi-do, KR;

Dae Suk Kim, Gyeonggi-do, KR;

Mun Seon Jang, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/52 (2006.01); G11C 7/10 (2006.01); G11C 29/02 (2006.01);
U.S. Cl.
CPC ...
G11C 29/52 (2013.01); G11C 7/1039 (2013.01); G11C 29/022 (2013.01);
Abstract

A memory device includes a plurality of first cell blocks configured to store first data; a second cell block configured to store second data; a third cell block configured to store third data; a repair information storage circuit configured to output, based on repair information stored therein, a repair use signal corresponding to an input address; and an error correction circuit configured to: receive the second data as a first error correction code from the second cell block while selectively receiving, according to the repair use signal, the third data as a second error correction code from the third cell block, and correct errors in the first data from the first cell blocks using the first and second error correction codes.


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