Semiconductor-element-including memory device

Abstract

A memory device includes pages each constituted by memory cells, and a page write operation of retaining a group of positive holes, inside a channel semiconductor layer, generated by an impact ionization phenomenon by controlling voltages applied to first and second gate conductor layers and first and second impurity layers in each memory cell and a page erase operation of discharging the group of positive holes by controlling the voltages are performed. The first and second impurity layers and the first and second gate conductor layers of each memory cell is connected to a source line, a bit line connected to a sense amplifier circuit, a word line, and a driving control line respectively. In a page read operation, page data in a selected page is read to the bit lines. To the driving control line connected to a non-selected page, a voltage of zero volt or lower is applied.