The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2024

Filed:

Oct. 31, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Simon Dawes, Mahopac, NY (US);

Ernst Kratschmer, South Dennis, MA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/2061 (2013.01); H01J 2237/3175 (2013.01);
Abstract

An electron beam lithography (Ebeam) method for a wafer having alignment and device layers with a design alignment. The Ebeam method includes executing an Ebeam scan of predefined length and resolution based on the design alignment over a pattern edge of the device layer, generating a signal from reflections of the Ebeam scan off the pattern edge, determining an offset of the device layer relative to the alignment layer from a comparison of the signal and the design alignment and applying the offset to the design alignment to obtain an actual measurement of Ebeam alignment.


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Dawes, Simon. (2024). Electron beam lithography with dynamic fin overlay correction (U.S. Patent No. 12099304). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12099304

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