The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2024

Filed:

Apr. 27, 2022
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Shunpei Yamazaki, Tokyo, JP;

Junichi Koezuka, Tochigi, JP;

Kenichi Okazaki, Tochigi, JP;

Masashi Tsubuku, Saitama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01); C30B 23/00 (2006.01); C30B 23/02 (2006.01); C30B 29/22 (2006.01); H01L 29/04 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
C23C 14/08 (2013.01); C23C 14/34 (2013.01); C23C 14/3414 (2013.01); C30B 23/00 (2013.01); C30B 23/02 (2013.01); C30B 29/22 (2013.01); H01L 27/1207 (2013.01); H01L 27/1225 (2013.01); H01L 29/045 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01);
Abstract

A metal oxide film containing a crystal part is provided. Alternatively, a metal oxide film with highly stable physical properties is provided. Alternatively, a metal oxide film with improved electrical characteristics is provided. Alternatively, a metal oxide film with which field-effect mobility can be increased is provided. A metal oxide film including In, M (M is Al, Ga, Y, or Sn), and Zn includes a first crystal part and a second crystal part; the first crystal part has c-axis alignment; the second crystal part has no c-axis alignment; and the existing proportion of the second crystal part is higher than the existing proportion of the first crystal part.


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