The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2024

Filed:

Jun. 29, 2021
Applicant:

Xiamen Industrial Technology Research Institute Co., Ltd., Fujian, CN;

Inventors:

Taiwei Chiu, Xiamen, CN;

Tingying Shen, Xiamen, CN;

Qi Xiang, Xiamen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/021 (2023.02); H10B 63/80 (2023.02); H10N 70/063 (2023.02); H10N 70/841 (2023.02);
Abstract

A semiconductor device and a manufacturing method of the semiconductor device. The semiconductor device includes: a semiconductor substrate; a bottom electrode metal layer located in the semiconductor substrate and a top electrode metal layer located on the semiconductor substrate; a resistive layer located between the bottom electrode metal layer and the top electrode metal layer, where the resistive layer has a variable resistance; a first oxygen grasping layer located between the bottom electrode metal layer and the top electrode metal layer, where the first oxygen grasping layer is located above the resistive layer; a second oxygen grasping layer located in the bottom electrode metal layer, where upper surfaces of the semiconductor substrate, the bottom electrode metal layer, and the second oxygen grasping layer are flush, and the resistive layer covers the semiconductor substrate, the bottom electrode metal layer, and the second oxygen grasping layer.


Find Patent Forward Citations

Chiu, Taiwei. (2024). Semiconductor device and manufacturing method of semiconductor device (U.S. Patent No. 12096703). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12096703

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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