The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Oct. 18, 2021
Apple Inc., Cupertino, CA (US);
Jung Yen Huang, Taoyuan, TW;
Shinya Ono, Santa Clara, CA (US);
Chin-Wei Lin, San Jose, CA (US);
Akira Matsudaira, Santa Clara, CA (US);
Cheng Min Hu, Hsinchu, TW;
Chih Pang Chang, Hsinchu, TW;
Ching-Sang Chuang, Sunnyvale, CA (US);
Gihoon Choo, San Jose, CA (US);
Jiun-Jye Chang, Cupertino, CA (US);
Po-Chun Yeh, Sunnyvale, CA (US);
Shih Chang Chang, Cupertino, CA (US);
Yu-Wen Liu, Hsinchu County, TW;
Zino Lee, Santa Clara, CA (US);
Apple Inc., Cupertino, CA (US);
Abstract
A display may include an array of pixels. Each pixel in the array includes an organic light-emitting diode coupled to associated semiconducting oxide transistors. The semiconducting oxide transistors may exhibit different device characteristics. Some of the semiconducting oxide transistors may be formed using a first oxide layer formed from a first semiconducting oxide material using first processing steps, whereas other semiconducting oxide transistors are formed using a second oxide layer formed from a second semiconducting oxide material using second processing steps different than the first processing steps. The display may include three or more different semiconducting oxide layers formed during different processing steps.