The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Jun. 03, 2021
Applicant:
Purdue Research Foundation, West Lafayette, IN (US);
Inventors:
Jianguo Mei, West Lafayette, IN (US);
Aristide Gumyusenge, Palo Alto, CA (US);
Assignee:
Purdue Research Foundation, West Lafayette, IN (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/05 (2006.01); C08G 73/10 (2006.01); C08L 79/08 (2006.01); H10K 10/46 (2023.01); H10K 85/10 (2023.01);
U.S. Cl.
CPC ...
H10K 10/471 (2023.02); C08G 73/1039 (2013.01); C08L 79/08 (2013.01); H10K 10/484 (2023.02); H10K 85/113 (2023.02);
Abstract
A transistor device that includes a substrate comprising metallic gate contacts, a dielectric layer on the substrate comprising a polyimide or derivative thereof, a semiconductor layer on the dielectric layer comprising a semiconducting polymer confined in a host matrix material comprising a polyimide or derivative thereof, and source and drain contacts on the semiconductor layer.