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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12096639 B1

PDFFull Text
Date of Patent:
Sep. 17, 2024

Filed:

Sep. 23, 2021

Magnetic memory device

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Ung Hwan Pi, Hwaseong-si, KR;

Sung Chul Lee, Osan-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

F. Chau & Associates, LLC

Primary Examiner:

John A Bodnar

Int. Cl.
CPC ...
H01L 27/22 (2006.01); G11C 11/16 (2006.01); H01L 43/02 (2006.01); H10B 61/00 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10B 61/22 (2023.02); G11C 11/161 (2013.01); H10N 50/80 (2023.02); G11C 11/165 (2013.01); H10N 50/85 (2023.02);
Abstract

A magnetic memory device includes a first magnetic memory cell extending in a first direction and including a first magnetic domain and a second magnetic domain arranged in the first direction, and a second magnetic memory cell extending in the first direction and including a third magnetic domain and a fourth magnetic domain arranged in the first direction. A magnetization direction of the first magnetic domain and a magnetization direction of the second magnetic domain are anti-parallel to each other. A magnetization direction of the third magnetic domain and a magnetization direction of the fourth magnetic domain are anti-parallel to each other. The third magnetic domain of the second magnetic memory cell is spaced apart from the second magnetic domain of the first magnetic memory cell in a second direction intersecting the first direction.

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