The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2024

Filed:

Jul. 14, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Yoonjo Hwang, Gimpo-si, KR;

Jiyoung Kim, Seoul, KR;

Jungtae Sung, Seoul, KR;

Junyoung Choi, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 41/27 (2023.01); G11C 5/02 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 41/27 (2023.02); G11C 5/025 (2013.01); H01L 23/5226 (2013.01); H01L 23/528 (2013.01); H10B 43/27 (2023.02);
Abstract

A semiconductor device includes a first substrate structure including a first substrate, circuit devices, first interconnection lines, bonding metal layers on upper surfaces of the first interconnection lines, and a first bonding insulating layer on the upper surfaces of the first interconnection lines and on lateral surfaces of the bonding metal layers, and a second substrate structure on the first substrate structure, and including a second substrate, gate electrodes, channel structures, second interconnection lines, bonding vias connected to the second interconnection lines and the bonding metal layers and having a lateral surface that is inclined such that widths of the bonding vias increase approaching the first substrate structure, and a second bonding insulating layer in contact with at least lower portions of the bonding vias. The bonding metal layers include dummy bonding metal layers not connected to the bonding vias and that contacts the second bonding insulating layer.


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