The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2024

Filed:

Apr. 09, 2019
Applicant:

Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;

Inventors:

Huilong Zhu, Poughkeepsie, NY (US);

Weixing Huang, Beijing, CN;

Kunpeng Jia, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/27 (2023.01); H01L 29/423 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H10B 41/27 (2023.02); H01L 29/42324 (2013.01); H01L 29/788 (2013.01);
Abstract

Disclosed are a semiconductor device, a method for manufacturing the same, an integrated circuit, and an electronic apparatus. The semiconductor device includes: a substrate; an active region on the substrate, the active region includes a first source and drain layer, a channel layer, and a second source and drain layer sequentially stacked on the substrate; a gate stack formed around an outer periphery of the channel layer; and an intermediate dielectric layer and a second conductive layer around an outer periphery of the gate stack and an outer periphery of the active region. The device and method provided by the present disclosure are used to solve the technical problem that the performances of the vertical device in the related art need to be improved. A semiconductor device with better performances is provided.


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