The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2024

Filed:

Aug. 10, 2022
Applicants:

Ams Sensors Usa Inc., Plano, TX (US);

Ams Sensors Belgium Bvba, Berchem, BE;

Inventors:

Denver Lloyd, Boise, ID (US);

Adi Xhakoni, Kessel Lo, BE;

Scott Johnson, Boise, ID (US);

Assignees:

ams Sensors USA Inc., Plano, TX (US);

ams Sensors Belgium BVBA, Berchem, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 25/59 (2023.01); H01L 27/146 (2006.01); H04N 25/531 (2023.01); H04N 25/583 (2023.01); H04N 25/585 (2023.01); H04N 25/62 (2023.01); H04N 25/75 (2023.01); H04N 25/778 (2023.01);
U.S. Cl.
CPC ...
H04N 25/59 (2023.01); H01L 27/14612 (2013.01); H01L 27/14643 (2013.01); H04N 25/531 (2023.01); H04N 25/583 (2023.01); H04N 25/585 (2023.01); H04N 25/62 (2023.01); H04N 25/75 (2023.01); H04N 25/778 (2023.01);
Abstract

In an embodiment a pixel arrangement includes a photodetector configured to accumulate charge carriers by converting electromagnetic radiation, a transfer transistor electrically coupled to the photodetector, a diffusion node electrically coupled to the transfer transistor, a reset transistor electrically coupled to the diffusion node and to a pixel supply voltage and a sample-and-hold stage including at least a first capacitor and a second capacitor, an input of the sample-and-hold stage being electrically coupled to the diffusion node via an amplifier, wherein the transfer transistor is configured to be pulsed to different voltage levels for transferring parts of the accumulated charge carriers to the diffusion node, wherein at least the second capacitor is configured to store a low conversion gain signal representing a first part of the accumulated charge carriers, and wherein the first capacitor is configured to store a high conversion gain signal representing a remaining part of the accumulated charge carriers.


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