The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2024

Filed:

Oct. 06, 2021
Applicant:

Ii-vi Delaware, Inc., Wilmington, DE (US);

Inventors:

Evgeny Zibik, Zurich, CH;

Wilfried Maineult, Zurich, CH;

Assignee:

II-VI Delaware, Inc., Wilmington, DE (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/22 (2006.01); H01S 5/10 (2021.01); H01S 5/20 (2006.01); H01S 5/32 (2006.01); H01S 5/323 (2006.01);
U.S. Cl.
CPC ...
H01S 5/2054 (2013.01); H01S 5/1039 (2013.01); H01S 5/22 (2013.01); H01S 5/3211 (2013.01); H01S 5/323 (2013.01);
Abstract

A semiconductor laser is formed to include a current blocking layer that is positioned below the active region of the device and used to minimize current spreading beyond the defined dimensions of an output beam's optical mode. When used in conjunction with other current-confining structures typically disposed above the active region (e.g., ridge waveguide, electrical isolation, oxide aperture), the inclusion of the lower current blocking layer improves the efficiency of the device. The current blocking layer may be used in edge-emitting devices or vertical cavity surface-emitting devices, and also functions to improve mode shaping and reduction of facet deterioration by directing current flow away from the facets.


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