The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Apr. 12, 2021
Applicant:
Seoul Viosys Co., Ltd., Gyeonggi-do, KR;
Inventors:
Yong Hyun Baek, Gyeonggi-do, KR;
Ji Hun Kang, Gyeonggi-do, KR;
Chae Hon Kim, Gyeonggi-do, KR;
Ji Hoon Park, Gyeonggi-do, KR;
Assignee:
Seoul Viosys Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 27/15 (2006.01); H01L 33/24 (2010.01); H01L 33/32 (2010.01); H01L 33/58 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 27/156 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 33/58 (2013.01); H01L 33/62 (2013.01);
Abstract
A light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The active layer has a single structure of a multi-quantum well in which a plurality of barrier layers and a plurality of well layers are stacked, and the active layer emits white light.