The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Aug. 30, 2022
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Energy Systems & Solutions Corporation, Kawasaki, JP;
Kazushige Yamamoto, Yokohama Kanagawa, JP;
Naoyuki Nakagawa, Tokyo, JP;
Yukitami Mizuno, Tokyo, JP;
Soichiro Shibasaki, Tokyo, JP;
Yuya Honishi, Saitama, JP;
Mutsuki Yamazaki, Yokohama Kanagawa, JP;
Yasutaka Nishida, Tokyo, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION, Kawasaki, JP;
Abstract
A solar cell of an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer located between the p-electrode and the n-electrode and mainly containing a cuprous oxide, and an n-type layer that includes a first n-type layer which is located between the p-type light-absorbing layer and the n-electrode, which mainly contains a compound represented by GaZnSnM1O, the M1 being one or more selected from the group consisting of Hf, Zr, In, Ti, Al, B, Mg, Si, and Ge, the v1, the v2, and the v4 being numerical values of 0.00 or more, the v3 and the v5 being numerical values of more than 0, at least one of the v1 and the v2 being a numerical value of more than 0, and the v5 when a sum of the v1, the v2, the v3, and the v4 is 1 being 1.00 or more and 2.00 or less, and which is located on the n-electrode side, and a second n-type layer which is a layer that mainly contains a compound represented by GaM2M3M4O, the M2 being Al or/and B, the M3 is one or more selected from the group consisting of In, Ti, Zn, Hf, and Zr, the M4 being one or more selected from the group consisting of Sn, Si, and Ge, the w1 and the w5 being numerical values of more than 0, the w2, the w3, and the w4 being numerical values of 0.00 or more, and the w5 when a sum of the w1, the w2, the w3, and the w4 is 2 being 3.00 or more and 3.80 or less, and which is located on the p-type light-absorbing layer side.