The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2024

Filed:

Jun. 21, 2022
Applicant:

Redlen Technologies, Inc., Saanichton, CA;

Inventors:

James Balcom, North Saanich, CA;

Jason MacKenzie, Victoria, CA;

Francis Joseph Kumar, Victoria, CA;

Krzysztof Iniewski, Port Moody, CA;

Michael K. Jackson, Victoria, CA;

Yuxin Song, Saanichton, CA;

Assignee:

REDLEN TECHNOLOGIES, INC., Saanichton, CA;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0272 (2006.01); H01L 31/0288 (2006.01); H01L 31/08 (2006.01); H01L 31/109 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0272 (2013.01); H01L 31/0288 (2013.01); H01L 31/085 (2013.01); H01L 31/109 (2013.01);
Abstract

An ionizing radiation detector includes a p-type semiconductor single crystal substrate having first and second major planar opposing surfaces, where the p-type semiconductor single crystal substrate is doped with n-type dopant atoms, and where a concentration of deep level acceptor defects is greater than a concentration of the n-type dopant atoms in the p-type semiconductor single crystal substrate; a cathode electrode on the first major planar opposing surface of the p-type semiconductor single crystal substrate, and a plurality of anode electrodes on the second major planar opposing surface of the p-type semiconductor single crystal substrate.


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