The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Oct. 16, 2023
Infineon Technologies Austria Ag, Villach, AT;
Stefan Tegen, Dresden, DE;
Matthias Kroenke, Dresden, DE;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A transistor device includes a semiconductor substrate having a first major surface, a cell field and an edge termination region laterally surrounding the cell field. The cell field includes: elongate active trenches that extend from the first major surface into the semiconductor substrate, a field plate and a gate electrode being positioned in each elongate active trench, the gate electrode being arranged above and electrically insulated from the field plate; and elongate mesas, each elongate mesa being formed between neighbouring elongate active trenches, the elongate mesas comprising a drift region, a body region on the drift region and a source region on the body region.