The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Dec. 30, 2021
Fuji Electric Co., Ltd., Kawasaki, JP;
Shinichiro Matsunaga, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, second semiconductor regions of the second conductivity type, third semiconductor regions of the second conductivity type, provided in the second semiconductor layer at positions facing the first semiconductor regions in a depth direction and having an impurity concentration higher than an impurity concentration of the second semiconductor layer, trenches, gate insulating films, gate electrodes, a first electrode, a second electrode, and third electrodes. The third electrodes form Schottky junctions with the second semiconductor layer and are provided on the surface of portions of the second semiconductor layer free of the third semiconductor regions.