The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Mar. 13, 2020
Applicant:
Osram Opto Semiconductors Gmbh, Regensburg, DE;
Inventors:
Assignee:
OSRAM Opto Semiconductors GmbH, Regensburg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/306 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0657 (2013.01); H01L 21/30608 (2013.01); H01L 29/2003 (2013.01); H01L 29/66462 (2013.01); H01L 29/66469 (2013.01);
Abstract
In an embodiment a method for structuring a semiconductor surface includes providing the semiconductor surface, wherein the semiconductor surface is part of a GaN-semiconductor layer, irradiating the semiconductor surface with an electron beam in order to produce an irradiated section and anisotropic wet-chemical etching of the semiconductor surface, wherein an etching rate in the irradiated section is less than that in an unirradiated section of the semiconductor surface, and wherein no etching mask is applied to the semiconductor surface before anisotropic wet-chemical etching.