The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2024

Filed:

May. 28, 2021
Applicant:

University of Southern California, Los Angeles, CA (US);

Inventors:

Wei Wu, Los Angeles, CA (US);

Tse-Hsien Ou, Los Angeles, CA (US);

Yunxiang Wang, Los Angeles, CA (US);

Hao Yang, Los Angeles, CA (US);

Assignee:

University of Southern California, Los Angeles, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1462 (2013.01); H01L 27/14685 (2013.01);
Abstract

A semiconductor-based sensor with enhanced light absorption, and in particular, enhanced infrared light absorption includes a semiconductor light sensor element and a patterned spatially inhomogeneous dielectric layer disposed over the semiconductor light sensor element. Characteristically, spatial inhomogeneity of the patterned spatially inhomogeneous dielectric layer is optimized to provide a maximized electric field in the semiconductor light sensor element such light absorption is enhanced.


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