The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2024

Filed:

Jun. 13, 2022
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Junji Hirase, Osaka, JP;

Yoshihiro Sato, Osaka, JP;

Yasuyuki Endoh, Hyogo, JP;

Hiroyuki Amikawa, Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 27/02 (2006.01); H04N 25/57 (2023.01); H04N 25/75 (2023.01); H04N 25/76 (2023.01);
U.S. Cl.
CPC ...
H01L 27/1461 (2013.01); H01L 27/0288 (2013.01); H01L 27/14603 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H04N 25/57 (2023.01); H04N 25/75 (2023.01); H04N 25/76 (2023.01);
Abstract

An imaging device having a semiconductor substrate including: a semiconductor region including an impurity of a first conductivity type, a first diffusion region that is in contact with the semiconductor region, that includes an impurity of a second conductivity type different from the first conductivity type, and that converts incident light into charges, and a second diffusion region that includes an impurity of the second conductivity type and that directly accumulates at least a part of the charges generated in the first diffusion region. The imaging device further includes a contact plug in contact with the second diffusion region, and a capacitive element electrically connected to the second diffusion region through the contact plug.


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