The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2024

Filed:

May. 28, 2020
Applicant:

Osaka University, Osaka, JP;

Inventors:

Katsuaki Suganuma, Suita, JP;

Chuantong Chen, Suita, JP;

Zheng Zhang, Suita, JP;

Assignee:

OSAKA UNIVERSITY, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/83 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 2224/29339 (2013.01); H01L 2224/29394 (2013.01); H01L 2224/29499 (2013.01); H01L 2224/32227 (2013.01); H01L 2224/83192 (2013.01); H01L 2224/83395 (2013.01); H01L 2224/83487 (2013.01); H01L 2224/8384 (2013.01); H01L 2924/05432 (2013.01);
Abstract

A bonding structure production method for producing a bonding structure () includes at least bonding a semiconductor element () and a substrate () using a silver paste. The substrate () includes a die attachment portion () to which the semiconductor element () is to be bonded. The die attachment portion () includes an alumina layer () serving as a surface layer on a bonding side of the die attachment portion () to which the semiconductor element () is to be bonded. The silver paste contains a solvent and silver particles with a residual strain measured by X-ray diffractometry of at least 5.0%. Preferably, the silver particles have a volume-based 50% cumulative diameter of at least 100 nm and no greater than 50 μm.


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