The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2024

Filed:

Mar. 23, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Myungsam Kang, Hwaseong-si, KR;

Youngchan Ko, Seoul, KR;

Kyungdon Mun, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/36 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 23/31 (2013.01); H01L 23/36 (2013.01); H01L 24/14 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01);
Abstract

A semiconductor package includes a redistribution substrate including a first redistribution layer; a semiconductor chip having a connection pad connected to the first redistribution layer; a vertical connection conductor electrically connected to the connection pad by the first redistribution layer; a core member having a first through-hole accommodating the semiconductor chip and a second through-hole accommodating the vertical connection conductor; an encapsulant filling the first and second through-holes; and a redistribution member including a second redistribution layer. The vertical connection conductor and the core member include a same material. A width of a lower surface of the vertical connection conductor is wider than that of an upper surface thereof, a width of a lower end of the first through-hole is narrower than that of an upper end thereof, and a width of a lower end of the second through-hole is narrower than that of an upper end thereof.


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