The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2024

Filed:

May. 09, 2023
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Rodney S. Lim, Daly City, CA (US);

Jung Bae Kim, San Jose, CA (US);

Jiarui Wang, San Jose, CA (US);

Yi Cui, San Jose, CA (US);

Dong Kil Yim, Pleasanton, CA (US);

Soo Young Choi, Fremont, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3192 (2013.01); H01L 21/0217 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 27/1248 (2013.01); H01L 29/786 (2013.01);
Abstract

Embodiments of the present disclosure generally relate to nitrogen-rich silicon nitride and methods for depositing the same, and transistors and other devices containing the same. In one or more embodiments, a passivation film stack is provided and includes a silicon oxide layer disposed on a workpiece, a nitrogen-rich silicon nitride layer disposed on the silicon oxide layer, and a hydrogen-rich silicon nitride layer disposed on the nitrogen-rich silicon nitride layer. The hydrogen-rich silicon nitride layer has a greater hydrogen concentration than the nitrogen-rich silicon nitride layer.


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