The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2024

Filed:

Nov. 04, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Markus Fabian Ritter, Adliswil, CH;

Fabrizio Nichele, Zurich, CH;

Heinz Schmid, Waedenswil, CH;

Heike Erika Riel, Baech, CH;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/311 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76264 (2013.01); H01L 21/31105 (2013.01);
Abstract

Techniques that can facilitate high-transparency semiconductor-metal interfaces are provided. In one example, a method can comprise forming a silicon on insulator (SOI) over a wafer. The method can further comprise depositing a metal on the SOI. The method can further comprise forming a structure by dry-etching the metal and dry-etching the SOI. The method can further comprise forming a template over the structure. The method can further comprise etching a portion of the SOI for removal under the metal. The method can further comprise growing a semiconductor where the portion of SOI was removed.


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