The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Jan. 12, 2022
Robert Bosch Gmbh, Stuttgart, DE;
Christof Schwenk, Stuttgart, DE;
Nicolas Schorr, Reutlingen, DE;
ROBERT BOSCH GMBH, Stuttgart, DE;
Abstract
A method for forming a trench in a first semiconductor layer of a multi-layer system. The method includes: applying a mask layer onto the first semiconductor layer, a recess being formed in the mask layer so that the first semiconductor layer is exposed within the recess; applying a protective layer which completely covers or modifies the first semiconductor layer exposed within the recess; applying a second semiconductor layer; etching the second semiconductor layer to completely remove it in a subarea surrounding the recess of the mask layer; etching the protective layer so that the first semiconductor layer is exposed within the recess; and forming the trench in the first semiconductor layer, the recess of the mask layer serving as an etching mask, and the trench being formed by a cyclical alternation between etching and passivation steps, the first etching step being longer than the subsequent etching steps.